This paper presents the first experimental investigation and physical discussion of the cryogenic behavior of a commercial 28 nm bulk CMOS technology. Here we extract the fundamental physical parameters of this technology at 300,77 and 4.2 K based on DC measurement results. The extracted values are then used to demonstrate the impact of cryogenic temperatures on the essential analog design parameters. We find that the simplified charge-based EKV model can accurately predict the cryogenic behavior. This represents a main step towards the design of analog/RF circuits integrated in an advanced bulk CMOS process and operating at cryogenic temperature for quantum computing control systems.

Beckers, A., Jazaeri, F., Ruffino, A., Bruschini, C., Baschirotto, A., Enz, C. (2017). Cryogenic characterization of 28 nm bulk CMOS technology for quantum computing. In European Solid-State Device Research Conference12 October 2017 47th European Solid-State Device Research Conference, ESSDERC 2017; Leuven; Belgium; 11-14 September 2017 (pp.62-65). Editions Frontieres [10.1109/ESSDERC.2017.8066592].

Cryogenic characterization of 28 nm bulk CMOS technology for quantum computing

Baschirotto, Andrea;
2017

Abstract

This paper presents the first experimental investigation and physical discussion of the cryogenic behavior of a commercial 28 nm bulk CMOS technology. Here we extract the fundamental physical parameters of this technology at 300,77 and 4.2 K based on DC measurement results. The extracted values are then used to demonstrate the impact of cryogenic temperatures on the essential analog design parameters. We find that the simplified charge-based EKV model can accurately predict the cryogenic behavior. This represents a main step towards the design of analog/RF circuits integrated in an advanced bulk CMOS process and operating at cryogenic temperature for quantum computing control systems.
paper
28 nm bulk CMOS; 4.2 K; cryogenic; EKV; quantum computing; slope factor; Electrical and Electronic Engineering; Safety, Risk, Reliability and Quality
English
47th European Solid-State Device Research Conference, ESSDERC 2017
2017
European Solid-State Device Research Conference12 October 2017 47th European Solid-State Device Research Conference, ESSDERC 2017; Leuven; Belgium; 11-14 September 2017
9781509059782
2017
62
65
8066592
http://ieeexplore.ieee.org/xpl/conferences.jsp
none
Beckers, A., Jazaeri, F., Ruffino, A., Bruschini, C., Baschirotto, A., Enz, C. (2017). Cryogenic characterization of 28 nm bulk CMOS technology for quantum computing. In European Solid-State Device Research Conference12 October 2017 47th European Solid-State Device Research Conference, ESSDERC 2017; Leuven; Belgium; 11-14 September 2017 (pp.62-65). Editions Frontieres [10.1109/ESSDERC.2017.8066592].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/191738
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