Radiation hardness tests of the CLARO8 ASIC, designed in AMS 0.35micron CMOS technology for the upgrade of the CERN LHCb RICH detectors, are presented, including measurements of total- ionizing dose and single event effects.

Andreotti, M., Baldini, W., Baszczyk, M., Calabrese, R., Candelori, A., Carniti, P., et al. (2017). Radiation hardness of the CLARO8 ASIC: A fast single-photon counting chip for the LHCb experiment at CERN. In IEEE Radiation Effects Data Workshop (pp.122-125). Institute of Electrical and Electronics Engineers Inc. [10.1109/NSREC.2016.7891728].

Radiation hardness of the CLARO8 ASIC: A fast single-photon counting chip for the LHCb experiment at CERN

Carniti, P;Cassina, L;Giachero, A;Gotti, C;Maino, M;Pessina, G;
2017

Abstract

Radiation hardness tests of the CLARO8 ASIC, designed in AMS 0.35micron CMOS technology for the upgrade of the CERN LHCb RICH detectors, are presented, including measurements of total- ionizing dose and single event effects.
slide + paper
Electrical and Electronic Engineering; Radiation; Nuclear and High Energy Physics
English
2016 IEEE Radiation Effects Data Workshop, REDW 2016
2016
IEEE Radiation Effects Data Workshop
9781509051144
2017
122
125
7891728
none
Andreotti, M., Baldini, W., Baszczyk, M., Calabrese, R., Candelori, A., Carniti, P., et al. (2017). Radiation hardness of the CLARO8 ASIC: A fast single-photon counting chip for the LHCb experiment at CERN. In IEEE Radiation Effects Data Workshop (pp.122-125). Institute of Electrical and Electronics Engineers Inc. [10.1109/NSREC.2016.7891728].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/189313
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