Photoluminescence (PL) of Gd-doped silica in the ultraviolet (UV) is investigated. The efficient emission detected at 314 nm is due to the 6P7/2 to 8S7/2 transition of a 4f electron of the Gd3+ ion.

He, J., Wang, Y., Steigenberger, S., Macpherson, A., Chiodini, N., Brambilla, G. (2016). Intense ultraviolet photoluminescence at 314 nm in Gd3+-doped silica. Intervento presentato a: 2016 Conference on Lasers and Electro-Optics, CLEO 2016, usa [10.1364/cleo_at.2016.jth2a.86].

Intense ultraviolet photoluminescence at 314 nm in Gd3+-doped silica

Chiodini, N;
2016

Abstract

Photoluminescence (PL) of Gd-doped silica in the ultraviolet (UV) is investigated. The efficient emission detected at 314 nm is due to the 6P7/2 to 8S7/2 transition of a 4f electron of the Gd3+ ion.
slide + paper
laser, optical fiber.
English
2016 Conference on Lasers and Electro-Optics, CLEO 2016
2016
9781943580118
2016
7788099
none
He, J., Wang, Y., Steigenberger, S., Macpherson, A., Chiodini, N., Brambilla, G. (2016). Intense ultraviolet photoluminescence at 314 nm in Gd3+-doped silica. Intervento presentato a: 2016 Conference on Lasers and Electro-Optics, CLEO 2016, usa [10.1364/cleo_at.2016.jth2a.86].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/185023
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