In this paper a complete design of a Content Addressable Memory (CAM) in bulk-CMOS 28nm technology is presented. The CAM has 64×18 bit resolution, operates at 200MHz and exploits the low power pipeline searching algorithm. Dedicated circuital solutions have been adopted to mitigate the well-known issues in CMOS 28nm-bulk technology (like higher sensitivity to Process-Voltage-Temperature variations, increased gate serie resistance, very low supply voltage vs. threshold voltage, etc). This allows to take advantage of the larger transition frequency available in nm-range technologies and the lower parasitic capacitances. Simulation results (based on post-layout extracted schematic) have been carried out, validating this way the hereby proposed CAM design. Overall average power consumption is 153μW, corresponding to 0.65fJ/(Bit·Search), one of the higher Figure-of-Merit comparing with similar CAM architectures available in literature. Total area occupancy for 1.152kb resolution is 0.015mm2.
Fary, F., Mangiagalli, L., Pipino, A., Resta, F., De Matteis, M., & Baschirotto, A. (2017). A 200MHz 0.65fJ/(Bit·Search)1.152kb pipeline content addressable memory in 28nm CMOS. In PRIME 2017 - 13th Conference on PhD Research in Microelectronics and Electronics, Proceedings, Taormina, 12-15 June 2017 (pp.353-356). Institute of Electrical and Electronics Engineers Inc. [10.1109/PRIME.2017.7974180].
Citazione: | Fary, F., Mangiagalli, L., Pipino, A., Resta, F., De Matteis, M., & Baschirotto, A. (2017). A 200MHz 0.65fJ/(Bit·Search)1.152kb pipeline content addressable memory in 28nm CMOS. In PRIME 2017 - 13th Conference on PhD Research in Microelectronics and Electronics, Proceedings, Taormina, 12-15 June 2017 (pp.353-356). Institute of Electrical and Electronics Engineers Inc. [10.1109/PRIME.2017.7974180]. | |
Tipo: | slide + paper | |
Carattere della pubblicazione: | Scientifica | |
Presenza di un coautore afferente ad Istituzioni straniere: | No | |
Titolo: | A 200MHz 0.65fJ/(Bit·Search)1.152kb pipeline content addressable memory in 28nm CMOS | |
Autori: | Fary, F; Mangiagalli, L; Pipino, A; Resta, F; De Matteis, M; Baschirotto, A | |
Autori: | ||
Data di pubblicazione: | 2017 | |
Lingua: | English | |
Nome del convegno: | 13th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2017 | |
ISBN: | 9781509065073 | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/PRIME.2017.7974180 | |
Appare nelle tipologie: | 02 - Intervento a convegno |