It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi2Te3film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.
Wiesner, M., Trzaskowska, A., Mroz, B., Charpentier, S., Wang, S., Song, Y., et al. (2017). The electron-phonon interaction at deep Bi2Te3-semiconductor interfaces from Brillouin light scattering. SCIENTIFIC REPORTS, 7(1) [10.1038/s41598-017-16313-5].
Citazione: | Wiesner, M., Trzaskowska, A., Mroz, B., Charpentier, S., Wang, S., Song, Y., et al. (2017). The electron-phonon interaction at deep Bi2Te3-semiconductor interfaces from Brillouin light scattering. SCIENTIFIC REPORTS, 7(1) [10.1038/s41598-017-16313-5]. | |
Tipo: | Articolo in rivista - Articolo scientifico | |
Carattere della pubblicazione: | Scientifica | |
Presenza di un coautore afferente ad Istituzioni straniere: | Si | |
Titolo: | The electron-phonon interaction at deep Bi2Te3-semiconductor interfaces from Brillouin light scattering | |
Autori: | Wiesner, M; Trzaskowska, A; Mroz, B; Charpentier, S; Wang, S; Song, Y; Lombardi, F; Lucignano, P; Benedek, G; Campi, D; Bernasconi, M; Guinea, F; Tagliacozzo, A | |
Autori: | ||
Data di pubblicazione: | 2017 | |
Lingua: | English | |
Rivista: | SCIENTIFIC REPORTS | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1038/s41598-017-16313-5 | |
Appare nelle tipologie: | 01 - Articolo su rivista |
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