In this contribution we experimentally demonstrate, by means of time resolved microphotoluminescence on single GaAs quantum dot (QD), that the lifetime is reduced when decreasing the dot size. The samples are grown by modified droplet epitaxy and are strain free nanocrystals. The analysis of the recombination kinetics as a function of the excitation power allows us to resolve the exciton and biexciton contribution, leading to a clear interpretation of the experimental data. The broad inhomogeneous size distribution of QDs grown by droplet epitaxy (O. Stier et al., Phys. Rev. B 59, 5688 (1999), [4]) is used to investigate QDs of different size in a single sample. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Abbarchi, M., Gurioli, M., Sanguinetti, S., Zamfirescu, M., Vinattieri, A., Koguchi, N. (2006). Recombination lifetime of single GaAs/AlGaAs quantum dots. PHYSICA STATUS SOLIDI. C, CURRENT TOPICS IN SOLID STATE PHYSICS, 3(11), 3860-3863 [10.1002/pssc.200671578].
Recombination lifetime of single GaAs/AlGaAs quantum dots
SANGUINETTI, STEFANO;
2006
Abstract
In this contribution we experimentally demonstrate, by means of time resolved microphotoluminescence on single GaAs quantum dot (QD), that the lifetime is reduced when decreasing the dot size. The samples are grown by modified droplet epitaxy and are strain free nanocrystals. The analysis of the recombination kinetics as a function of the excitation power allows us to resolve the exciton and biexciton contribution, leading to a clear interpretation of the experimental data. The broad inhomogeneous size distribution of QDs grown by droplet epitaxy (O. Stier et al., Phys. Rev. B 59, 5688 (1999), [4]) is used to investigate QDs of different size in a single sample. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.