PdGe contact fabrication on Se-doped Ge(001) is investigated. PdGe thin film resistivity is two times lower if the PdGe layer is grown by Pd reactive diffusion on Se-doped Ge, compared to PdGe layer grown in the same condition on Se-free Ge. The phase sequence and the phase growth kinetics during Pd reactive diffusion with Ge are not modified by the presence of Se atoms. However, the PdGe film texture is different with Se, and Se segregates at the PdGe/Ge interface. These results suggest that Se atoms may be used to produce efficient contacts on n-type Ge.
Descoins, M., Perrin Toinin, J., Zhiou, S., Hoummada, K., Bertoglio, M., Ma, R., et al. (2017). PdGe contact fabrication on Se-doped Ge. SCRIPTA MATERIALIA, 139, 104-107 [10.1016/j.scriptamat.2017.06.029].
PdGe contact fabrication on Se-doped Ge
NARDUCCI, DARIOPenultimo
;
2017
Abstract
PdGe contact fabrication on Se-doped Ge(001) is investigated. PdGe thin film resistivity is two times lower if the PdGe layer is grown by Pd reactive diffusion on Se-doped Ge, compared to PdGe layer grown in the same condition on Se-free Ge. The phase sequence and the phase growth kinetics during Pd reactive diffusion with Ge are not modified by the presence of Se atoms. However, the PdGe film texture is different with Se, and Se segregates at the PdGe/Ge interface. These results suggest that Se atoms may be used to produce efficient contacts on n-type Ge.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
