PdGe contact fabrication on Se-doped Ge(001) is investigated. PdGe thin film resistivity is two times lower if the PdGe layer is grown by Pd reactive diffusion on Se-doped Ge, compared to PdGe layer grown in the same condition on Se-free Ge. The phase sequence and the phase growth kinetics during Pd reactive diffusion with Ge are not modified by the presence of Se atoms. However, the PdGe film texture is different with Se, and Se segregates at the PdGe/Ge interface. These results suggest that Se atoms may be used to produce efficient contacts on n-type Ge.

Descoins, M., Perrin Toinin, J., Zhiou, S., Hoummada, K., Bertoglio, M., Ma, R., et al. (2017). PdGe contact fabrication on Se-doped Ge. SCRIPTA MATERIALIA, 139, 104-107 [10.1016/j.scriptamat.2017.06.029].

PdGe contact fabrication on Se-doped Ge

NARDUCCI, DARIO
Penultimo
;
2017

Abstract

PdGe contact fabrication on Se-doped Ge(001) is investigated. PdGe thin film resistivity is two times lower if the PdGe layer is grown by Pd reactive diffusion on Se-doped Ge, compared to PdGe layer grown in the same condition on Se-free Ge. The phase sequence and the phase growth kinetics during Pd reactive diffusion with Ge are not modified by the presence of Se atoms. However, the PdGe film texture is different with Se, and Se segregates at the PdGe/Ge interface. These results suggest that Se atoms may be used to produce efficient contacts on n-type Ge.
Articolo in rivista - Articolo scientifico
Contact; Germanium; Palladium; Reaction; Selenium;
Contact; Germanium; Palladium; Reaction; Selenium; Materials Science (all); Condensed Matter Physics
English
2017
139
104
107
none
Descoins, M., Perrin Toinin, J., Zhiou, S., Hoummada, K., Bertoglio, M., Ma, R., et al. (2017). PdGe contact fabrication on Se-doped Ge. SCRIPTA MATERIALIA, 139, 104-107 [10.1016/j.scriptamat.2017.06.029].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/164668
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