A 3rd-order continuous-time ΣΔ modulator for MEMS microphones in 0.16-μm CMOS technology achieves 106.7-dB DR and 93.2-dB peak SNDR, consuming 390 μW from a 1.6-V power supply and occupying an area of 0.21 mm2. The ΣΔ modulator, based on a feedforward architecture, uses only two operational amplifiers for achieving the 3rd-order loop-filter transfer function, a 15-level quantizer, and a feedback DAC with three-level current-steering elements, which minimizes the noise contribution at small input signal, in order to achieve a DR > 100 dB with the largest reported Schreier FoM (184 dB).
De Berti, C., Malcovati, P., Crespi, L., Baschirotto, A. (2015). A 106.7-dB DR, 390-μW CT 3rd-order ΣΔ modulator for MEMS microphones. In Proceedings of the European Solid-State Circuits Conference (pp.209-212). IEEE Computer Society [10.1109/ESSCIRC.2015.7313864].
A 106.7-dB DR, 390-μW CT 3rd-order ΣΔ modulator for MEMS microphones
BASCHIROTTO, ANDREAUltimo
2015
Abstract
A 3rd-order continuous-time ΣΔ modulator for MEMS microphones in 0.16-μm CMOS technology achieves 106.7-dB DR and 93.2-dB peak SNDR, consuming 390 μW from a 1.6-V power supply and occupying an area of 0.21 mm2. The ΣΔ modulator, based on a feedforward architecture, uses only two operational amplifiers for achieving the 3rd-order loop-filter transfer function, a 15-level quantizer, and a feedback DAC with three-level current-steering elements, which minimizes the noise contribution at small input signal, in order to achieve a DR > 100 dB with the largest reported Schreier FoM (184 dB).
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