Sn-doped silica and SnO2:SiO2 glass-ceramics were produced by sol-gel synthesis. Charge trapping and radiative recombinations from ionizing irradiation were investigated in the 8-300 K range. Three radioluminescence (RL) emissions were observed at 1.9, 2.3 and 3.2eV. Dose-dependence of RL shows that the 3.2eV emission grows during the irradiation. 2.3eV RL is the main process at low temperature, whereas it is a minor decay at 300K, as well as in phosphorescence and thermoluminescence. Glow curves show peaks at 80 and 200K. The results suggest that radiative decays and trapping processes occur in the silica network. © 2004 Elsevier B.V. All rights reserved.
Paleari, A., Chiodini, N., DI MARTINO, D., Franchina, E., Lauria, A., Spinolo, G. (2004). Low-temperature radio- and thermo-stimulated luminescence of SnO2-doped silica. JOURNAL OF NON-CRYSTALLINE SOLIDS, 345-346, 306-310 [10.1016/j.jnoncrysol.2004.08.033].
Low-temperature radio- and thermo-stimulated luminescence of SnO2-doped silica
PALEARI, ALBERTO MARIA FELICE;CHIODINI, NORBERTO;DI MARTINO, DANIELA;SPINOLO, GIORGIO MARIO
2004
Abstract
Sn-doped silica and SnO2:SiO2 glass-ceramics were produced by sol-gel synthesis. Charge trapping and radiative recombinations from ionizing irradiation were investigated in the 8-300 K range. Three radioluminescence (RL) emissions were observed at 1.9, 2.3 and 3.2eV. Dose-dependence of RL shows that the 3.2eV emission grows during the irradiation. 2.3eV RL is the main process at low temperature, whereas it is a minor decay at 300K, as well as in phosphorescence and thermoluminescence. Glow curves show peaks at 80 and 200K. The results suggest that radiative decays and trapping processes occur in the silica network. © 2004 Elsevier B.V. All rights reserved.
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