The mechanism of NO interaction with nanocrystalline (6-10nm particle size) SnO<sub>2</sub> powdered samples, obtained by sol-gel synthesis, was studied by electron paramagnetic resonance and Mössbauer spectroscopy. Resistance measurements on nanostructured (3nm particle size) SnO<sub>2</sub> thin films (80-160nm), still obtained by sol-gel route, were coupled to spectral results. Spectroscopic investigations demonstrated that the NO interaction involves electron injection to the oxide, formation of oxygen vacancies, and chemisorption of NO<sub>2</sub><sup>-</sup> and NO<sub>3</sub><sup>-</sup> anions. The amount of oxygen vacancies depends on the annealing atmosphere of SnO<sub>2</sub>. When it was previously annealed under inert (Ar) atmosphere, the NO interaction causes a great amount of oxygen defects as the lack of chemisorbed oxygen species forces NO to interact with lattice oxide anions; instead when annealed in air, NO also reacts with chemisorbed oxygen species giving NO<sub>2</sub><sup>-</sup> and NO<sub>3</sub><sup>-</sup> anions. Accordingly, the electrical response is higher in the case of predominant NO interaction with lattice oxide anions, because a great amount of NO electrons are transferred to SnO<sub>2</sub>. © 2003 Elsevier B.V. All rights reserved.

Canevali, C., Mari, C., Mattoni, M., Morazzoni, F., Ruffo, R., Scotti, R., et al. (2004). Mechanism of sensing NO in argon by nanocrystalline SnO2: Electron paramagnetic resonance, Mössbauer and electrical study. SENSORS AND ACTUATORS. B, CHEMICAL, 100(1-2), 228-235 [10.1016/j.snb.2003.12.037].

Mechanism of sensing NO in argon by nanocrystalline SnO2: Electron paramagnetic resonance, Mössbauer and electrical study

CANEVALI, CARMEN;MARI, CLAUDIO MARIA;MORAZZONI, FRANCA;RUFFO, RICCARDO;SCOTTI, ROBERTO;
2004

Abstract

The mechanism of NO interaction with nanocrystalline (6-10nm particle size) SnO2 powdered samples, obtained by sol-gel synthesis, was studied by electron paramagnetic resonance and Mössbauer spectroscopy. Resistance measurements on nanostructured (3nm particle size) SnO2 thin films (80-160nm), still obtained by sol-gel route, were coupled to spectral results. Spectroscopic investigations demonstrated that the NO interaction involves electron injection to the oxide, formation of oxygen vacancies, and chemisorption of NO2- and NO3- anions. The amount of oxygen vacancies depends on the annealing atmosphere of SnO2. When it was previously annealed under inert (Ar) atmosphere, the NO interaction causes a great amount of oxygen defects as the lack of chemisorbed oxygen species forces NO to interact with lattice oxide anions; instead when annealed in air, NO also reacts with chemisorbed oxygen species giving NO2- and NO3- anions. Accordingly, the electrical response is higher in the case of predominant NO interaction with lattice oxide anions, because a great amount of NO electrons are transferred to SnO2. © 2003 Elsevier B.V. All rights reserved.
Articolo in rivista - Articolo scientifico
ossido di stagno, no, sensore per gas, EPR, Mosssbauer, nanocristalli,
English
2004
100
1-2
228
235
none
Canevali, C., Mari, C., Mattoni, M., Morazzoni, F., Ruffo, R., Scotti, R., et al. (2004). Mechanism of sensing NO in argon by nanocrystalline SnO2: Electron paramagnetic resonance, Mössbauer and electrical study. SENSORS AND ACTUATORS. B, CHEMICAL, 100(1-2), 228-235 [10.1016/j.snb.2003.12.037].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/13949
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