The mechanism of NO interaction with nanocrystalline (6-10nm particle size) SnO<sub>2</sub> powdered samples, obtained by sol-gel synthesis, was studied by electron paramagnetic resonance and Mössbauer spectroscopy. Resistance measurements on nanostructured (3nm particle size) SnO<sub>2</sub> thin films (80-160nm), still obtained by sol-gel route, were coupled to spectral results. Spectroscopic investigations demonstrated that the NO interaction involves electron injection to the oxide, formation of oxygen vacancies, and chemisorption of NO<sub>2</sub><sup>-</sup> and NO<sub>3</sub><sup>-</sup> anions. The amount of oxygen vacancies depends on the annealing atmosphere of SnO<sub>2</sub>. When it was previously annealed under inert (Ar) atmosphere, the NO interaction causes a great amount of oxygen defects as the lack of chemisorbed oxygen species forces NO to interact with lattice oxide anions; instead when annealed in air, NO also reacts with chemisorbed oxygen species giving NO<sub>2</sub><sup>-</sup> and NO<sub>3</sub><sup>-</sup> anions. Accordingly, the electrical response is higher in the case of predominant NO interaction with lattice oxide anions, because a great amount of NO electrons are transferred to SnO<sub>2</sub>. © 2003 Elsevier B.V. All rights reserved.

Canevali, C., Mari, C., Mattoni, M., Morazzoni, F., Ruffo, R., Scotti, R., et al. (2004). Mechanism of Sensing NO in Argon by Nanocrystalline SnO2: Electron Paramagnetic Resonance, Mössbauer and Electrical Study. SENSORS AND ACTUATORS. B, CHEMICAL, 100(1-2), 228-235 [10.1016/j.snb.2003.12.037].

Mechanism of Sensing NO in Argon by Nanocrystalline SnO2: Electron Paramagnetic Resonance, Mössbauer and Electrical Study

CANEVALI, CARMEN;MARI, CLAUDIO MARIA;MORAZZONI, FRANCA;RUFFO, RICCARDO;SCOTTI, ROBERTO;
2004

Abstract

The mechanism of NO interaction with nanocrystalline (6-10nm particle size) SnO2 powdered samples, obtained by sol-gel synthesis, was studied by electron paramagnetic resonance and Mössbauer spectroscopy. Resistance measurements on nanostructured (3nm particle size) SnO2 thin films (80-160nm), still obtained by sol-gel route, were coupled to spectral results. Spectroscopic investigations demonstrated that the NO interaction involves electron injection to the oxide, formation of oxygen vacancies, and chemisorption of NO2- and NO3- anions. The amount of oxygen vacancies depends on the annealing atmosphere of SnO2. When it was previously annealed under inert (Ar) atmosphere, the NO interaction causes a great amount of oxygen defects as the lack of chemisorbed oxygen species forces NO to interact with lattice oxide anions; instead when annealed in air, NO also reacts with chemisorbed oxygen species giving NO2- and NO3- anions. Accordingly, the electrical response is higher in the case of predominant NO interaction with lattice oxide anions, because a great amount of NO electrons are transferred to SnO2. © 2003 Elsevier B.V. All rights reserved.
Articolo in rivista - Articolo scientifico
ossido di stagno, no, sensore per gas, EPR, Mosssbauer, nanocristalli,
English
228
235
Canevali, C., Mari, C., Mattoni, M., Morazzoni, F., Ruffo, R., Scotti, R., et al. (2004). Mechanism of Sensing NO in Argon by Nanocrystalline SnO2: Electron Paramagnetic Resonance, Mössbauer and Electrical Study. SENSORS AND ACTUATORS. B, CHEMICAL, 100(1-2), 228-235 [10.1016/j.snb.2003.12.037].
Canevali, C; Mari, C; Mattoni, M; Morazzoni, F; Ruffo, R; Scotti, R; Russo, U; Nodari, L
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/13949
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