The structural defects in two-dimensional transition metal dichalcogenides, including point defects, dislocations and grain boundaries, are scarcely considered regarding their potential to manipulate the electrical and optical properties of this class of materials, notwithstanding the significant advances already made. Indeed, impurities and vacancies may influence the exciton population, create disorder-induced localization, as well as modify the electrical behaviour of the material. Here we report on the experimental evidence, confirmed by ab initio calculations, that sulfur vacancies give rise to a novel near-infrared emission peak around 0.75 eV in exfoliated MoS2 flakes. In addition, we demonstrate an excess of sulfur vacancies at the flake's edges by means of cathodoluminescence mapping, aberration-corrected transmission electron microscopy imaging and electron energy loss analyses. Moreover, we show that ripplocations, extended line defects peculiar to this material, broaden and redshift the MoS2 indirect bandgap emission.

Fabbri, F., Rotunno, E., Cinquanta, E., Campi, D., Bonnini, E., Kaplan, D., et al. (2016). Novel near-infrared emission from crystal defects in MoS 2 multilayer flakes. NATURE COMMUNICATIONS, 7 [10.1038/ncomms13044].

Novel near-infrared emission from crystal defects in MoS 2 multilayer flakes

CAMPI, DAVIDE;BERNASCONI, MARCO;
2016

Abstract

The structural defects in two-dimensional transition metal dichalcogenides, including point defects, dislocations and grain boundaries, are scarcely considered regarding their potential to manipulate the electrical and optical properties of this class of materials, notwithstanding the significant advances already made. Indeed, impurities and vacancies may influence the exciton population, create disorder-induced localization, as well as modify the electrical behaviour of the material. Here we report on the experimental evidence, confirmed by ab initio calculations, that sulfur vacancies give rise to a novel near-infrared emission peak around 0.75 eV in exfoliated MoS2 flakes. In addition, we demonstrate an excess of sulfur vacancies at the flake's edges by means of cathodoluminescence mapping, aberration-corrected transmission electron microscopy imaging and electron energy loss analyses. Moreover, we show that ripplocations, extended line defects peculiar to this material, broaden and redshift the MoS2 indirect bandgap emission.
Articolo in rivista - Articolo scientifico
electronic materials, 2D materials, optoelectronics
English
Fabbri, F., Rotunno, E., Cinquanta, E., Campi, D., Bonnini, E., Kaplan, D., et al. (2016). Novel near-infrared emission from crystal defects in MoS 2 multilayer flakes. NATURE COMMUNICATIONS, 7 [10.1038/ncomms13044].
Fabbri, F; Rotunno, E; Cinquanta, E; Campi, D; Bonnini, E; Kaplan, D; Lazzarini, L; Bernasconi, M; Ferrari, C; Longo, M; Nicotra, G; Molle, A; Swaminathan, V; Salviati, G
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/135434
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