The temperature dependent thermal conductivity of In–Sb–Te thin films has been measured by modulated photothermal radiometry in the 20–550 °C range for samples with different Te content. Significant changes with temperature are observed and ascribed to a sequence of structural transformations on the basis of in-situ Raman spectra. The data suggest that the as-deposited material consisting of a mixture of polycrystalline InSb0.8Te0.2and amorphous Te first undergoes a progressive crystallization of the amorphous part, mostly above 300 °C. Further increase in temperature above 460 °C leads, for higher Te content in the alloy, to the formation of crystalline In3SbTe2, intertwined with a less conductive compound, possibly InTe and/or InSb. Upon cooling to room temperature, the initial polycrystalline InSb0.8Te0.2phase is mostly recovered along with other compounds, with a slightly higher thermal conductivity than that of the as deposited material. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim).

Battaglia, J., Kusiak, A., Gaborieau, C., Anguy, Y., Nguyen, H., Wiemer, C., et al. (2016). Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550 °C. PHYSICA STATUS SOLIDI. RAPID RESEARCH LETTERS, 10(7), 544-548 [10.1002/pssr.201600109].

Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550 °C

NGUYEN, HUU TAN;CAMPI, DAVIDE;BERNASCONI, MARCO
Penultimo
;
2016

Abstract

The temperature dependent thermal conductivity of In–Sb–Te thin films has been measured by modulated photothermal radiometry in the 20–550 °C range for samples with different Te content. Significant changes with temperature are observed and ascribed to a sequence of structural transformations on the basis of in-situ Raman spectra. The data suggest that the as-deposited material consisting of a mixture of polycrystalline InSb0.8Te0.2and amorphous Te first undergoes a progressive crystallization of the amorphous part, mostly above 300 °C. Further increase in temperature above 460 °C leads, for higher Te content in the alloy, to the formation of crystalline In3SbTe2, intertwined with a less conductive compound, possibly InTe and/or InSb. Upon cooling to room temperature, the initial polycrystalline InSb0.8Te0.2phase is mostly recovered along with other compounds, with a slightly higher thermal conductivity than that of the as deposited material. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim).
Articolo in rivista - Articolo scientifico
alloys; crystallization; In−Sb−Te; Raman spectroscopy; Te content; thermal conductivity; thin films;
alloys; crystallization; In−Sb−Te; Raman spectroscopy; thermal conductivity; thin films; phase change materials
English
544
548
5
Battaglia, J., Kusiak, A., Gaborieau, C., Anguy, Y., Nguyen, H., Wiemer, C., et al. (2016). Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550 °C. PHYSICA STATUS SOLIDI. RAPID RESEARCH LETTERS, 10(7), 544-548 [10.1002/pssr.201600109].
Battaglia, J; Kusiak, A; Gaborieau, C; Anguy, Y; Nguyen, H; Wiemer, C; Fallica, R; Campi, D; Bernasconi, M; Longo, M
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/132260
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