In n-type Czochralski silicon (Cz-Si) wafer, swirl shaped regions with low lifetime (known as striations) can cause degradation up to 1% absolute or even more in homojunction industrial solar cells. Nevertheless, the nature of the defects responsible for the occurrence of these striations is still unclear. In this work, n-type Cz-Si solar cell precursors cut from industrial size ingots with different feedstock quality and oxygen content were analyzed by microwave photo-conductance decay and photoluminescence in order to investigate the nature of such defects. The results demonstrate that the defects responsible for the occurrence of striations are oxide nanoprecipitates formed during the high temperature steps for the solar cell realization, due to the presence of grown-in oxygen nuclei.

LE DONNE, A., Binetti, S., Folegatti, V., Coletti, G. (2016). On the nature of striations in n-type silicon solar cells. APPLIED PHYSICS LETTERS, 109(3) [10.1063/1.4959558].

On the nature of striations in n-type silicon solar cells

LE DONNE, ALESSIA
Primo
;
BINETTI, SIMONA OLGA
;
2016

Abstract

In n-type Czochralski silicon (Cz-Si) wafer, swirl shaped regions with low lifetime (known as striations) can cause degradation up to 1% absolute or even more in homojunction industrial solar cells. Nevertheless, the nature of the defects responsible for the occurrence of these striations is still unclear. In this work, n-type Cz-Si solar cell precursors cut from industrial size ingots with different feedstock quality and oxygen content were analyzed by microwave photo-conductance decay and photoluminescence in order to investigate the nature of such defects. The results demonstrate that the defects responsible for the occurrence of striations are oxide nanoprecipitates formed during the high temperature steps for the solar cell realization, due to the presence of grown-in oxygen nuclei.
Articolo in rivista - Articolo scientifico
n-type Silicon, solar cells, striations, photoluminescence
English
LE DONNE, A., Binetti, S., Folegatti, V., Coletti, G. (2016). On the nature of striations in n-type silicon solar cells. APPLIED PHYSICS LETTERS, 109(3) [10.1063/1.4959558].
LE DONNE, A; Binetti, S; Folegatti, V; Coletti, G
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/130426
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