Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.
Sanguinetti, S., Bietti, S., Scarpellini, D., Ballabio, A., Miglio, L., Isella, G., et al. (2015). GaAs nanostructures on Si platform. In Conference Proceeding 20th OptoElectronics and Communications Conference, OECC 2015 (pp.1-3). Institute of Electrical and Electronics Engineers Inc. [10.1109/OECC.2015.7340229].
GaAs nanostructures on Si platform
Sanguinetti, S;BIETTI, SERGIOSecondo
;MIGLIO, LEONIDA;
2015
Abstract
Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.
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