The process of hole and electron localization in LuAG:Ce,Mg ceramics is studied by electron spin resonance (ESR) and thermally stimulated luminescence (TSL). Hole traps, which are created by UV irradiation, are detected in the form of O- centers. Mg-perturbed variants of O- centers are proposed to exist. The thermal stability of such defects is studied, proving that they are stable up to room temperature. The interaction between O- centers and shallow electron traps is studied by thermally stimulated luminescence (TSL) and phosphorescence experiments, which reveal the occurrence of an a-thermal tunneling process between trapped electrons and randomly distributed Ce centers. By correlating the TSL-derived trap parameters and temperature dependent ESR intensities, it is found that O- centers compete with Ce centers in free electron capture.
Hu, C., Liu, S., Fasoli, M., Vedda, A., Nikl, M., Feng, X., et al. (2015). ESR and TSL study of hole and electron traps in LuAG:Ce,Mg ceramic scintillator. OPTICAL MATERIALS, 45, 252-257 [10.1016/j.optmat.2015.03.049].
ESR and TSL study of hole and electron traps in LuAG:Ce,Mg ceramic scintillator
FASOLI, MAURO;VEDDA, ANNA GRAZIELLA;
2015
Abstract
The process of hole and electron localization in LuAG:Ce,Mg ceramics is studied by electron spin resonance (ESR) and thermally stimulated luminescence (TSL). Hole traps, which are created by UV irradiation, are detected in the form of O- centers. Mg-perturbed variants of O- centers are proposed to exist. The thermal stability of such defects is studied, proving that they are stable up to room temperature. The interaction between O- centers and shallow electron traps is studied by thermally stimulated luminescence (TSL) and phosphorescence experiments, which reveal the occurrence of an a-thermal tunneling process between trapped electrons and randomly distributed Ce centers. By correlating the TSL-derived trap parameters and temperature dependent ESR intensities, it is found that O- centers compete with Ce centers in free electron capture.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.