Cu2ZnSnSe4 films were prepared by selenization of metallic precursors obtained by a new wet process involving metal formates. Cu(HCOO)2 and Zn(HCOO)2 were used as copper and zinc sources respectively, while tin was introduced as a methoxide.The elemental analysis of the resulting absorber layers revealed a very low carbon content (less than 0.2wt%), which is believed to be a feature that chemical methods need to have in order to stand out as valuable alternatives to high-vacuum processes in this field. Solar cells with efficiencies of up to 2.39% with Voc of 207mV, a Jsc of 31.2mA/cm2 and a fill factor of 37.1% were achieved for these copper-poor CZTSe absorbers.
Tombolato, S., Berner, U., Colombara, D., Chrastina, D., Widenmeyer, M., Binetti, S., et al. (2015). Cu2ZnSnSe4 device obtained by formate chemistry for metallic precursor layer fabrication. SOLAR ENERGY, 116, 287-292 [10.1016/j.solener.2015.03.050].
Cu2ZnSnSe4 device obtained by formate chemistry for metallic precursor layer fabrication
TOMBOLATO, SARA
;BINETTI, SIMONA OLGAPenultimo
;
2015
Abstract
Cu2ZnSnSe4 films were prepared by selenization of metallic precursors obtained by a new wet process involving metal formates. Cu(HCOO)2 and Zn(HCOO)2 were used as copper and zinc sources respectively, while tin was introduced as a methoxide.The elemental analysis of the resulting absorber layers revealed a very low carbon content (less than 0.2wt%), which is believed to be a feature that chemical methods need to have in order to stand out as valuable alternatives to high-vacuum processes in this field. Solar cells with efficiencies of up to 2.39% with Voc of 207mV, a Jsc of 31.2mA/cm2 and a fill factor of 37.1% were achieved for these copper-poor CZTSe absorbers.
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