Self-organized surface structures were produced by picosecond laser pulses on multi-crystalline silicon for photovoltaic applications. Three different laser wavelengths were employed (i.e. 1064 nm, 532 nm and 355 nm) and the resulting morphologies were observed to effectively reduce the reflectivity of the samples after laser irradiation. Besides, a comparative study of the laser induced subsurface damage generated by the three different wavelengths was performed by confocal micro-Raman, photoluminescence and transmission electron microscopy. The results of both the structural and optical characterization showed that the mc-Si texturing performed with the laser at 355 nm provides surface reflectivity between 11% and 8% over the spectral range from 400 nm to 1 μm, while inducing the lowest subsurface damage, located above the depletion region of the p-n junction.

Binetti, S., LE DONNE, A., Rolfi, A., Jäggi, B., Neuenschwander, B., Busto, C., et al. (2016). Picosecond laser texturization of mc-silicon for photovoltaics: A comparison between 1064 nm, 532 nm and 355 nm radiation wavelengths. APPLIED SURFACE SCIENCE, 371, 196-202 [10.1016/j.apsusc.2016.02.187].

Picosecond laser texturization of mc-silicon for photovoltaics: A comparison between 1064 nm, 532 nm and 355 nm radiation wavelengths

BINETTI, SIMONA OLGA
Primo
;
LE DONNE, ALESSIA
;
2016

Abstract

Self-organized surface structures were produced by picosecond laser pulses on multi-crystalline silicon for photovoltaic applications. Three different laser wavelengths were employed (i.e. 1064 nm, 532 nm and 355 nm) and the resulting morphologies were observed to effectively reduce the reflectivity of the samples after laser irradiation. Besides, a comparative study of the laser induced subsurface damage generated by the three different wavelengths was performed by confocal micro-Raman, photoluminescence and transmission electron microscopy. The results of both the structural and optical characterization showed that the mc-Si texturing performed with the laser at 355 nm provides surface reflectivity between 11% and 8% over the spectral range from 400 nm to 1 μm, while inducing the lowest subsurface damage, located above the depletion region of the p-n junction.
Articolo in rivista - Articolo scientifico
Laser texturing; mc-Silicon; Picosecond lasers; Solar cells; Subsurface damage;
Laser texturing; mc-Silicon; Picosecond lasers; Solar cells; Subsurface damage; Surfaces, Coatings and Films
English
196
202
7
Binetti, S., LE DONNE, A., Rolfi, A., Jäggi, B., Neuenschwander, B., Busto, C., et al. (2016). Picosecond laser texturization of mc-silicon for photovoltaics: A comparison between 1064 nm, 532 nm and 355 nm radiation wavelengths. APPLIED SURFACE SCIENCE, 371, 196-202 [10.1016/j.apsusc.2016.02.187].
Binetti, S; LE DONNE, A; Rolfi, A; Jäggi, B; Neuenschwander, B; Busto, C; Frigeri, C; Scorticati, D; Longoni, L; Pellegrino, S
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/109899
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