statistiche ricercatore

Nome	#
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach	292
In-plane selective area InSb–Al nanowire quantum networks	288
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires	236
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations	221
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials	217
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations	215
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials	210
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations	206
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations	193
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries	97
Author Correction: In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4)	40
Totale	2.215

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2019/2020	130	0	0	0	0	12	16	16	13	30	19	22	2
2020/2021	691	12	13	58	56	49	61	46	65	72	74	64	121
2021/2022	503	82	58	84	41	25	37	22	27	20	23	37	47
2022/2023	498	69	124	44	79	32	41	2	32	21	27	18	9
2023/2024	143	5	12	2	4	20	42	20	3	12	2	3	18
2024/2025	188	21	71	42	26	28	0	0	0	0	0	0	0
Totale													2.215

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