statistiche ricercatore

Nome	#
In-plane selective area InSb–Al nanowire quantum networks	268
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach	268
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires	223
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials	203
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials	200
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations	195
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations	195
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations	176
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations	176
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries	71
Author Correction: In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4)	29
Totale	2.004

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2018/2019	22	0	0	0	0	0	0	0	0	0	0	0	22
2019/2020	170	13	9	8	10	12	16	16	13	30	19	22	2
2020/2021	691	12	13	58	56	49	61	46	65	72	74	64	121
2021/2022	503	82	58	84	41	25	37	22	27	20	23	37	47
2022/2023	498	69	124	44	79	32	41	2	32	21	27	18	9
2023/2024	120	5	12	2	4	20	42	20	3	12	0	0	0
Totale													2.004

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