TSUKAMOTO, SHIRO
 Distribuzione geografica
Continente #
NA - Nord America 253
EU - Europa 69
AS - Asia 26
AF - Africa 6
Totale 354
Nazione #
US - Stati Uniti d'America 249
IT - Italia 30
FR - Francia 15
DE - Germania 10
CN - Cina 7
ZA - Sudafrica 6
JP - Giappone 5
CA - Canada 4
UA - Ucraina 4
VN - Vietnam 4
AE - Emirati Arabi Uniti 3
BE - Belgio 3
KR - Corea 3
FI - Finlandia 2
HK - Hong Kong 2
RU - Federazione Russa 2
BD - Bangladesh 1
GB - Regno Unito 1
IE - Irlanda 1
NL - Olanda 1
TW - Taiwan 1
Totale 354
Città #
Fairfield 33
Santa Cruz 20
Houston 17
Cambridge 16
Milan 16
Ashburn 15
Buffalo 14
Seattle 13
University Park 12
Woodbridge 12
Wilmington 9
Columbus 7
Chicago 6
Muizenberg 6
Shanghai 5
Ann Arbor 4
Mountain View 4
Dallas 3
Dong Ket 3
Kraainem 3
Las Vegas 3
San Diego 3
Boardman 2
Council Bluffs 2
Guangzhou 2
Hong Kong 2
Lake Forest 2
Los Angeles 2
Melzo 2
Nerima 2
Norwalk 2
Ottawa 2
Provo 2
San Francisco 2
Ulsan 2
Andover 1
Anzano Del Parco 1
Atlanta 1
Austin 1
Cedar Knolls 1
Clearwater 1
Dublin 1
Falls Church 1
Frankfurt am Main 1
Grenoble 1
Hamilton 1
Helsinki 1
Henderson 1
Joto 1
Lappeenranta 1
Mainz 1
Modena 1
Nuremberg 1
Paris 1
Phoenix 1
Rochester 1
Sagamino 1
Saint Louis 1
Salerno 1
Sesto San Giovanni 1
Taipei 1
Toronto 1
Yokohama 1
Totale 278
Nome #
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors, file e39773b5-2331-35a3-e053-3a05fe0aac26 123
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates, file e39773b6-2a1a-35a3-e053-3a05fe0aac26 122
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A, file e39773b6-5914-35a3-e053-3a05fe0aac26 87
Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets, file 8ddb51e6-b55a-4f15-9138-6b9a44d1573e 25
Nucleation of Ga droplets self-assembly on GaAs(111)A substrates, file e405ac5e-b6d5-4828-bf81-0fa733a2233f 3
Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling, file 816876f7-6808-4a4d-bd47-4aa3de051a1f 2
Raman spectroscopy of epitaxial InGaN/Si in the central composition range, file e39773b5-dd46-35a3-e053-3a05fe0aac26 1
Totale 363
Categoria #
all - tutte 1.073
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.073


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201912 0 0 0 0 0 0 0 0 0 0 6 6
2019/202052 4 2 3 4 3 2 8 8 8 5 1 4
2020/202198 9 13 10 4 8 9 4 8 9 9 10 5
2021/202283 7 9 6 3 10 1 2 5 4 5 19 12
2022/202355 3 2 20 10 1 5 4 1 1 0 6 2
2023/202451 2 3 2 1 3 12 7 1 5 6 9 0
Totale 363