The aim of the present work is to measure the thermal conductivity of In-Sb-Te alloy (IST) with a varying quantity of Te. The material is deposited as a thin film using the Metal-Organic Chemical Vapour Deposition (MOCVD) technique. Changing slightly the deposition parameters leads to achieve the Te variation within the alloy. We measured also the thermal boundary resistances at the interfaces between the IST layer with dielectric (SiO2, Al2O3) and metallic (Pt) layers. The measurement of the thermal conductivity and TBR is performed in a broad temperature range from room temperature (RT) up to 550°C in order to have the phase change occurring at the expected temperature and to obverse related variations of the measured quantities.

(2015). Thermal Characterization of In-Sb-Te thin films for phase change memory application. (Tesi di dottorato, Università degli Studi di Milano-Bicocca, 2015).

Thermal Characterization of In-Sb-Te thin films for phase change memory application

NGUYEN, HUU TAN
2015

Abstract

The aim of the present work is to measure the thermal conductivity of In-Sb-Te alloy (IST) with a varying quantity of Te. The material is deposited as a thin film using the Metal-Organic Chemical Vapour Deposition (MOCVD) technique. Changing slightly the deposition parameters leads to achieve the Te variation within the alloy. We measured also the thermal boundary resistances at the interfaces between the IST layer with dielectric (SiO2, Al2O3) and metallic (Pt) layers. The measurement of the thermal conductivity and TBR is performed in a broad temperature range from room temperature (RT) up to 550°C in order to have the phase change occurring at the expected temperature and to obverse related variations of the measured quantities.
FANCIULLI, MARCO
BATTAGLIA, JEAN-LUC
Phase change memory, In-Sb-Te ternary, Thermal conductivity, Thermal boundary resistance
FIS/03 - FISICA DELLA MATERIA
English
NANOSTRUTTURE E NANOTECNOLOGIE - 33R
28
2014/2015
(2015). Thermal Characterization of In-Sb-Te thin films for phase change memory application. (Tesi di dottorato, Università degli Studi di Milano-Bicocca, 2015).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/98985
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