Methods, systems, and devices for operating memory cell(s) using transition metal doped GST are described. As discussed herein, a composition including germanium(Ge), antimony (Sb), tellurium(Te),and at least one of yttrium (Y) and scandium(Sc)may be used as a memory element in a memory cell. For example, a memory element may include a composition having Ge in an amount ranging from 15 to 35 atomic percent(at.%)of the composition, Sb in an amount less than or equal to 50 at.% of the composition, Te in an amount greater than or equal to 40 at.% of the composition, and at least one of Y and Sc in an amount ranging from 0.15 to 10at.% of the composition.
Fantini, P., Bernasconi, M., Gabardi, S. (2020)Transition metal doped Germanium-Antimony-Tellurium (GST) memory device components and composition. . Brevetto No. 16/869,49.
Transition metal doped Germanium-Antimony-Tellurium (GST) memory device components and composition
Bernasconi, M;Gabardi, S
2020
Abstract
Methods, systems, and devices for operating memory cell(s) using transition metal doped GST are described. As discussed herein, a composition including germanium(Ge), antimony (Sb), tellurium(Te),and at least one of yttrium (Y) and scandium(Sc)may be used as a memory element in a memory cell. For example, a memory element may include a composition having Ge in an amount ranging from 15 to 35 atomic percent(at.%)of the composition, Sb in an amount less than or equal to 50 at.% of the composition, Te in an amount greater than or equal to 40 at.% of the composition, and at least one of Y and Sc in an amount ranging from 0.15 to 10at.% of the composition.
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