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10.1080/23746149.2016.1181986
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Continuum modelling of semiconductor heteroepitaxy: an applied perspective
R. Bergamaschini
M. Salvalaglio
R. Backofen
A. Voigt
F. Montalenti
Heteroepitaxy
continuum modelling
phase-field
intermixing
dislocations
Advances in Physics: X, 2016. doi:10.1080/23746149.2016.1181986
Taylor & Francis
Journal
Advances in Physics: X
© 2016 Informa UK Limited, trading as Taylor & Francis Group
2374-6149
1
37
10.1080/23746149.2016.1181986
http://dx.doi.org/10.1080/23746149.2016.1181986
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2016-08-24T14:56:29+05:30
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