The heteroepitaxial growth of 3C-SiC on Si(001) and Si(111) substrates deeply patterned at a micrometer scale by low-pressure chemical vapor deposition is shown to lead to space-filling isolated structures resulting from a mechanism of self-limitation of lateral expansion. Stacking fault densities and wafer bowing may be drastically reduced for optimized pattern geometries.

von Känel, H., Miglio, L., Crippa, D., Kreiliger, T., Mauceri, M., Puglisi, M., et al. (2015). Defect reduction in epitaxial 3C-SiC on Si(001) and Si(111) by deep substrate patterning. In D. Chaussende, G. Ferro (a cura di), Silicon Carbide and Related Materials 2014 (pp. 193-196). Trans Tech Publications Ltd [10.4028/www.scientific.net/MSF.821-823.193].

Defect reduction in epitaxial 3C-SiC on Si(001) and Si(111) by deep substrate patterning

MIGLIO, LEONIDA
Secondo
;
2015

Abstract

The heteroepitaxial growth of 3C-SiC on Si(001) and Si(111) substrates deeply patterned at a micrometer scale by low-pressure chemical vapor deposition is shown to lead to space-filling isolated structures resulting from a mechanism of self-limitation of lateral expansion. Stacking fault densities and wafer bowing may be drastically reduced for optimized pattern geometries.
Capitolo o saggio
3C-SiC; Heteroepitaxy; Low-pressure chemical vapor deposition; Patterned substrates; Stacking fault reduction; Wafer bowing; Materials Science (all); Condensed Matter Physics; Mechanical Engineering; Mechanics of Materials
English
Silicon Carbide and Related Materials 2014
Chaussende, D; Ferro, G
2015
9783038354789
821-823
Trans Tech Publications Ltd
193
196
von Känel, H., Miglio, L., Crippa, D., Kreiliger, T., Mauceri, M., Puglisi, M., et al. (2015). Defect reduction in epitaxial 3C-SiC on Si(001) and Si(111) by deep substrate patterning. In D. Chaussende, G. Ferro (a cura di), Silicon Carbide and Related Materials 2014 (pp. 193-196). Trans Tech Publications Ltd [10.4028/www.scientific.net/MSF.821-823.193].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/99768
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