The heteroepitaxial growth of 3C-SiC on Si(001) and Si(111) substrates deeply patterned at a micrometer scale by low-pressure chemical vapor deposition is shown to lead to space-filling isolated structures resulting from a mechanism of self-limitation of lateral expansion. Stacking fault densities and wafer bowing may be drastically reduced for optimized pattern geometries.
von Känel, H., Miglio, L., Crippa, D., Kreiliger, T., Mauceri, M., Puglisi, M., et al. (2015). Defect reduction in epitaxial 3C-SiC on Si(001) and Si(111) by deep substrate patterning. In D. Chaussende, G. Ferro (a cura di), Silicon Carbide and Related Materials 2014 (pp. 193-196). Trans Tech Publications Ltd [10.4028/www.scientific.net/MSF.821-823.193].
Defect reduction in epitaxial 3C-SiC on Si(001) and Si(111) by deep substrate patterning
MIGLIO, LEONIDASecondo
;
2015
Abstract
The heteroepitaxial growth of 3C-SiC on Si(001) and Si(111) substrates deeply patterned at a micrometer scale by low-pressure chemical vapor deposition is shown to lead to space-filling isolated structures resulting from a mechanism of self-limitation of lateral expansion. Stacking fault densities and wafer bowing may be drastically reduced for optimized pattern geometries.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.