We studied spin properties of Ge heterostructures by optical orientation and Hanle measurements. The circular polarization of the direct gap photoluminescence is shown to exceed the theoretical bulk limit, yielding about 37% and 85% for transitions with heavy and light holes, respectively. The energetic proximity of Γ and L valleys and ultrafast scattering of electrons from Γ to L states allowed us to resolve the spin dynamics of holes and to observe the polarization of electrons after scattering to L valleys. The spin relaxation analysis indicates that the spin lifetime of electrons exceeds 5 ns below 150 K, whereas it is in the 500 ps range for holes. © 2012 SPIE

Pezzoli, F., Bottegoni, F., Trivedi, D., Ciccacci, F., Giorgioni, A., Li, P., et al. (2012). Optical spin injection and spin lifetime in Ge heterostructures. In Proceedings SPIE 8461, Spintronics V, 84610P (October 1, 2012). S P I E - International Society for Optical Engineering [10.1117/12.929204].

Optical spin injection and spin lifetime in Ge heterostructures

PEZZOLI, FABIO
;
GIORGIONI, ANNA;Cecchi, S;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
2012

Abstract

We studied spin properties of Ge heterostructures by optical orientation and Hanle measurements. The circular polarization of the direct gap photoluminescence is shown to exceed the theoretical bulk limit, yielding about 37% and 85% for transitions with heavy and light holes, respectively. The energetic proximity of Γ and L valleys and ultrafast scattering of electrons from Γ to L states allowed us to resolve the spin dynamics of holes and to observe the polarization of electrons after scattering to L valleys. The spin relaxation analysis indicates that the spin lifetime of electrons exceeds 5 ns below 150 K, whereas it is in the 500 ps range for holes. © 2012 SPIE
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Germanium; Optical orientation; Photoluminescence; Quantum wells; Si photonics; Spin; Spin relaxation; Spintronics; Applied Mathematics; Computer Science Applications1707 Computer Vision and Pattern Recognition; Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials; Condensed Matter Physics
English
Conference on Spintronics V - Aug 12-16
2012
Drouhin, H-J; Wegrowe, J-E; Razeghi, M
Proceedings SPIE 8461, Spintronics V, 84610P (October 1, 2012)
978-081949178-7
2012
8461
84610P
none
Pezzoli, F., Bottegoni, F., Trivedi, D., Ciccacci, F., Giorgioni, A., Li, P., et al. (2012). Optical spin injection and spin lifetime in Ge heterostructures. In Proceedings SPIE 8461, Spintronics V, 84610P (October 1, 2012). S P I E - International Society for Optical Engineering [10.1117/12.929204].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/78791
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