A simple silicon-based electroluminescent device has been realized, embedding beta-FeSi2 precipitates in the depletion region of a Si p-n junction by ion-beam synthesis, a process fully compatible with microelectronics technologies. Light emission peaked at about 1.6 mum has been observed up to room temperature. The luminescence signal is shown to be due to interband recombination in the crystalline nanoprecipitates. (C) 2003 American Institute of Physics.
Martinelli, L., Grilli, E., Guzzi, M., Grimaldi, M. (2003). Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon. APPLIED PHYSICS LETTERS, 83(4), 794-796 [10.1063/1.1593815].
Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon
GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
2003
Abstract
A simple silicon-based electroluminescent device has been realized, embedding beta-FeSi2 precipitates in the depletion region of a Si p-n junction by ion-beam synthesis, a process fully compatible with microelectronics technologies. Light emission peaked at about 1.6 mum has been observed up to room temperature. The luminescence signal is shown to be due to interband recombination in the crystalline nanoprecipitates. (C) 2003 American Institute of Physics.
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