In this work, a new method for Cu(In,Ga)Se2 thin film growth has been tested, which is different from the common co-evaporation and sputtering processes. The purpose of the deposition method proposed is to find a solution that combines the advantages of the sputtering and evaporation solutions for a scalable process to an industrial level. The system object of the paper allows to realize an indirect deposition of the film by sputtering to the substrate. In particular, metal precursors, with the desired ratio, are initially deposited in an area characterized by inert atmosphere, without vapors of selenium, on one or more cylindrical bodies used for the transfer. When the material deposited on the cylindrical bodies is located - as a result of the movement of rotation of the latter - in front of the substrate, where a Se atmosphere is present, it is evaporated by means of localized heating. At the moment, with the new procedure an efficiency of 14.8% has been reached on glass.
Acciarri, M., Binetti, S., LE DONNE, A., Garattini, P., Mereu, R., Vodopivec, B., et al. (2013). An Alternative Method for Cu(In,Ga)Se2 Deposition. In EU PVSEC Proceedings [10.4229/28thEUPVSEC2013-3BV.6.45].
An Alternative Method for Cu(In,Ga)Se2 Deposition
ACCIARRI, MAURIZIO FILIPPOPrimo
;BINETTI, SIMONA OLGASecondo
;LE DONNE, ALESSIA;GARATTINI, PAOLO;MEREU, RALUCA ANCA;VODOPIVEC, BRUNO;MARCHIONNA, STEFANO;
2013
Abstract
In this work, a new method for Cu(In,Ga)Se2 thin film growth has been tested, which is different from the common co-evaporation and sputtering processes. The purpose of the deposition method proposed is to find a solution that combines the advantages of the sputtering and evaporation solutions for a scalable process to an industrial level. The system object of the paper allows to realize an indirect deposition of the film by sputtering to the substrate. In particular, metal precursors, with the desired ratio, are initially deposited in an area characterized by inert atmosphere, without vapors of selenium, on one or more cylindrical bodies used for the transfer. When the material deposited on the cylindrical bodies is located - as a result of the movement of rotation of the latter - in front of the substrate, where a Se atmosphere is present, it is evaporated by means of localized heating. At the moment, with the new procedure an efficiency of 14.8% has been reached on glass.
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