We present a comparison of two different techniques for the evaluation of Threading Dislocation Density (TDD) in Si1-xGex graded buffers: chemical etching and Electron-Beam-Induced-Current (EBIC) imaging. The samples analyzed consist of a series of linearly graded Si1-xGex buffers terminated by a constant composition layer with Ge concentration varying between 0.2 and 0.9. The films were deposited on Si(1 0 0) wafers by means of Low Energy Plasma Enhanced CVD (LE-PECVD). Our results indicates that EBIC proves to be a versatile method, which provides reliable information on the defect concentration up to a Ge concentration of x = 0.4. For higher values of x (x = 0.7) the information is approximated but yet reliable for the purpose of optimising the growth process. In order to perform EBIC measurements on samples with higher Ge concentrations (x = 0.9), the Schottky diode fabrication has to be improved. (C) 2006 Elsevier Ltd. All rights reserved.
Virtuani, A., Marchionna, S., Acciarri, M., Isella, G., von Kaenel, H. (2006). Electron-beam-induced current imaging for the characterisation of structural defects in Si1-xGex films grown by LE-PECVD. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 9(04-mag), 798-801 [10.1016/j.mssp.2006.08.064].
Electron-beam-induced current imaging for the characterisation of structural defects in Si1-xGex films grown by LE-PECVD
ACCIARRI, MAURIZIO FILIPPO;
2006
Abstract
We present a comparison of two different techniques for the evaluation of Threading Dislocation Density (TDD) in Si1-xGex graded buffers: chemical etching and Electron-Beam-Induced-Current (EBIC) imaging. The samples analyzed consist of a series of linearly graded Si1-xGex buffers terminated by a constant composition layer with Ge concentration varying between 0.2 and 0.9. The films were deposited on Si(1 0 0) wafers by means of Low Energy Plasma Enhanced CVD (LE-PECVD). Our results indicates that EBIC proves to be a versatile method, which provides reliable information on the defect concentration up to a Ge concentration of x = 0.4. For higher values of x (x = 0.7) the information is approximated but yet reliable for the purpose of optimising the growth process. In order to perform EBIC measurements on samples with higher Ge concentrations (x = 0.9), the Schottky diode fabrication has to be improved. (C) 2006 Elsevier Ltd. All rights reserved.
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