In this letter, we show that the gap nature in β-FeSi2 is turned from indirect to direct when a suitable strain field is induced in the structure. Such a lattice deformation corresponds to a full lattice matching for the epitaxial relationship β-FeSi2(110)//Si(111), which is one of the most common orientations occurring to β-FeSi2 precipitates in silicon

Miglio, L., Meregalli, V., Jepsen, O. (1999). Strain dependent gap nature of epitaxial beta-FeSi2 in silicon by first principles calculations. APPLIED PHYSICS LETTERS, 75(3), 385-387 [10.1063/1.124383].

Strain dependent gap nature of epitaxial beta-FeSi2 in silicon by first principles calculations

MIGLIO, LEONIDA;
1999

Abstract

In this letter, we show that the gap nature in β-FeSi2 is turned from indirect to direct when a suitable strain field is induced in the structure. Such a lattice deformation corresponds to a full lattice matching for the epitaxial relationship β-FeSi2(110)//Si(111), which is one of the most common orientations occurring to β-FeSi2 precipitates in silicon
Articolo in rivista - Articolo scientifico
Strain; band structure
English
1999
75
3
385
387
none
Miglio, L., Meregalli, V., Jepsen, O. (1999). Strain dependent gap nature of epitaxial beta-FeSi2 in silicon by first principles calculations. APPLIED PHYSICS LETTERS, 75(3), 385-387 [10.1063/1.124383].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/6576
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