In ballistic electron emission microscopy (BEEM) the propagation of hot carriers in thin metal films has long been treated using a free electron model. While the model explains many experimental findings, it cannot account for the lateral resolution observed for both electrons and holes on epitaxial CoSi2/Si(111), where interfacial point defects of atomic size appear as small as 1.3 nm, even below a 5.6 nm thick film. We present ab initio calculations explaining this high resolution in terms of conduction (valence) band structure focusing of electrons (holes), according to a recent Green's function approach to the BEEM process
Meyer, T., Migas, D., Miglio, L., von Kanel, H. (2000). Electron and hole focusing in CoSi2/Si(111) observed by ballistic electron emission microscopy. PHYSICAL REVIEW LETTERS, 85(7), 1520-1523 [10.1103/PhysRevLett.85.1520].
Electron and hole focusing in CoSi2/Si(111) observed by ballistic electron emission microscopy
Miglio, L;
2000
Abstract
In ballistic electron emission microscopy (BEEM) the propagation of hot carriers in thin metal films has long been treated using a free electron model. While the model explains many experimental findings, it cannot account for the lateral resolution observed for both electrons and holes on epitaxial CoSi2/Si(111), where interfacial point defects of atomic size appear as small as 1.3 nm, even below a 5.6 nm thick film. We present ab initio calculations explaining this high resolution in terms of conduction (valence) band structure focusing of electrons (holes), according to a recent Green's function approach to the BEEM processI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.