We show that the migration process of a 60 degrees shuffle dislocation in an heteroepitaxial Ge/Si0.5Ge0.5(001) system can be analysed by classical molecular dynamics simulations. By following the misfit segment during its motion, we build a sequence of strain maps giving detailed information about the elastic-energy relaxation in the film. The atomic-scale mechanisms underlying the dislocation motion towards the interface are also monitored, showing, for instance, that kinks are actually present along the dislocation line.

Marzegalli, A., Montalenti, F., Miglio, L. (2005). Atomistic simulation of a 60 degrees shuffle dislocation segment migrating in a Ge/SiGe(001) epitaxial film. JOURNAL OF PHYSICS. CONDENSED MATTER, 17(48), 7505-7515 [10.1088/0953-8984/17/48/004].

Atomistic simulation of a 60 degrees shuffle dislocation segment migrating in a Ge/SiGe(001) epitaxial film

MARZEGALLI, ANNA;MONTALENTI, FRANCESCO CIMBRO MATTIA;MIGLIO, LEONIDA
2005

Abstract

We show that the migration process of a 60 degrees shuffle dislocation in an heteroepitaxial Ge/Si0.5Ge0.5(001) system can be analysed by classical molecular dynamics simulations. By following the misfit segment during its motion, we build a sequence of strain maps giving detailed information about the elastic-energy relaxation in the film. The atomic-scale mechanisms underlying the dislocation motion towards the interface are also monitored, showing, for instance, that kinks are actually present along the dislocation line.
Articolo in rivista - Articolo scientifico
Plastic relaxation; thin films; strain
English
2005
17
48
7505
7515
none
Marzegalli, A., Montalenti, F., Miglio, L. (2005). Atomistic simulation of a 60 degrees shuffle dislocation segment migrating in a Ge/SiGe(001) epitaxial film. JOURNAL OF PHYSICS. CONDENSED MATTER, 17(48), 7505-7515 [10.1088/0953-8984/17/48/004].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/6438
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