We compare elastic relaxation and Si-Ge distribution in epitaxial islands grown on both pit-patterned and flat Si(001) substrates. Anomalous x-ray diffraction yields that nucleation in the pits provides a higher relaxation. Using an innovative, model-free fitting procedure based on self-consistent solutions of the elastic problem, we provide compositional and elastic-energy maps. Islands grown on flat substrates exhibit stronger composition gradients and do not show a monotonic decrease of elastic energy with height. Both phenomena are explained using both thermodynamic and kinetic arguments.
Schulli, T., Vastola, G., Richard, M., Malachias, A., Renaud, G., Uhlik, F., et al. (2009). Enhanced Relaxation and Intermixing in Ge Islands Grown on Pit-Patterned Si(001) Substrates. PHYSICAL REVIEW LETTERS, 102(2) [10.1103/PhysRevLett.102.025502].
Enhanced Relaxation and Intermixing in Ge Islands Grown on Pit-Patterned Si(001) Substrates
MONTALENTI, FRANCESCO CIMBRO MATTIA;MIGLIO, LEONIDA;
2009
Abstract
We compare elastic relaxation and Si-Ge distribution in epitaxial islands grown on both pit-patterned and flat Si(001) substrates. Anomalous x-ray diffraction yields that nucleation in the pits provides a higher relaxation. Using an innovative, model-free fitting procedure based on self-consistent solutions of the elastic problem, we provide compositional and elastic-energy maps. Islands grown on flat substrates exhibit stronger composition gradients and do not show a monotonic decrease of elastic energy with height. Both phenomena are explained using both thermodynamic and kinetic arguments.
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