Germanium is known to become a direct band gap material when subject to a biaxial tensile strain of 2% or to a uniaxial tensile strain of 4%. In this work we demonstrate that the latter condition can be obtained by exploiting suitable SiGe nanostructures lithographycally defined on top of a Ge film. Such unprecedented strain value is caused by the perimetral elastic forces exerted on the film by the nanostructures, in their attempt to recover their bulk lattice parameter. These findings might lead to the realization of strained-Ge integrated emitters with unprecedented properties, while being compatible with current silicon technology.

Gagliano, L., Rossetto, L., Scopece, D., Mondiali, V., Lodari, M., Giorgioni, A., et al. (2014). Local uniaxial tensile deformation of germanium up to the 4% threshold by epitaxial nanostructures. Intervento presentato a: European Material Research Society Fall Meeting, Warsaw University of Technology, Poland.

Local uniaxial tensile deformation of germanium up to the 4% threshold by epitaxial nanostructures

SCOPECE, DANIELE;GIORGIONI, ANNA;PEZZOLI, FABIO;MONTALENTI, FRANCESCO CIMBRO MATTIA
Penultimo
;
BONERA, EMILIANO
Ultimo
2014

Abstract

Germanium is known to become a direct band gap material when subject to a biaxial tensile strain of 2% or to a uniaxial tensile strain of 4%. In this work we demonstrate that the latter condition can be obtained by exploiting suitable SiGe nanostructures lithographycally defined on top of a Ge film. Such unprecedented strain value is caused by the perimetral elastic forces exerted on the film by the nanostructures, in their attempt to recover their bulk lattice parameter. These findings might lead to the realization of strained-Ge integrated emitters with unprecedented properties, while being compatible with current silicon technology.
slide
Strain, stress, Raman, photoluminescence, silicon,germanium, SiGe, finite element modeling
English
European Material Research Society Fall Meeting
2014
2014
none
Gagliano, L., Rossetto, L., Scopece, D., Mondiali, V., Lodari, M., Giorgioni, A., et al. (2014). Local uniaxial tensile deformation of germanium up to the 4% threshold by epitaxial nanostructures. Intervento presentato a: European Material Research Society Fall Meeting, Warsaw University of Technology, Poland.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/62586
Citazioni
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
Social impact