The tight-binding molecular dynamics method with hot electrons is used to simulate the laser-induced melting of silicon. The results are in good agreement with previous ab initio simulation and experimental data. Our findings assess the reliability of the tight-binding model to describe silicon with a high concentration of excited electrons. The role of volume changes in the laser-induced melting has also been addressed within constant-pressure tight-binding molecular dynamics.
Gambirasio, A., Bernasconi, M., Colombo, L. (2000). Laser-induced melting of silicon: A tight-binding molecular dynamics simulation. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 61(12), 8233-8237 [10.1103/PhysRevB.61.8233].
Laser-induced melting of silicon: A tight-binding molecular dynamics simulation
BERNASCONI, MARCO;
2000
Abstract
The tight-binding molecular dynamics method with hot electrons is used to simulate the laser-induced melting of silicon. The results are in good agreement with previous ab initio simulation and experimental data. Our findings assess the reliability of the tight-binding model to describe silicon with a high concentration of excited electrons. The role of volume changes in the laser-induced melting has also been addressed within constant-pressure tight-binding molecular dynamics.
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