The absorption coefficient of silicon at 1118 cm(-1) due to the multiphonon contribution related to the combination of two transverse optical and one transverse acoustical phonons is measured at the liquid He temperature. The precise knowledge of this contribution, usually hidden by the absorption band of the unavoidable oxygen impurities, permits the quantitative measurement of interstitial oxygen concentration down to 3x10(14) atoms/cm(3). (C) 2001 American Institute of Physics.
Sassella, A. (2001). Measurement of interstitial oxygen concentration in silicon below 10(15)atoms/cm(3). APPLIED PHYSICS LETTERS, 79(26), 4339-4341 [10.1063/1.1429293].
Measurement of interstitial oxygen concentration in silicon below 10(15)atoms/cm(3)
Sassella, A
2001
Abstract
The absorption coefficient of silicon at 1118 cm(-1) due to the multiphonon contribution related to the combination of two transverse optical and one transverse acoustical phonons is measured at the liquid He temperature. The precise knowledge of this contribution, usually hidden by the absorption band of the unavoidable oxygen impurities, permits the quantitative measurement of interstitial oxygen concentration down to 3x10(14) atoms/cm(3). (C) 2001 American Institute of Physics.
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