An analysis, based on angle-resolved X-ray photoelectron spectroscopy, multiple-internal-reflection infrared spectroscopy, and atomic force microscopy, of device-quality (1 0 0)silicon surfaces after etching in dilute aqueous solution of HF is presented. The analysis shows that the surface is mainly formed by a heterogeneous distribution of SiH, SiH<sub>2</sub>and SiH<sub>3</sub> terminations, but contains sub-stoichiometric oxidized silicon. The analysis shows moreover the existence of a form of reduced silicon, not consistent with the currently accepted picture of the native HF<sub>aq</sub>-etched surface. © 2008 Elsevier B.V. All rights reserved.
Cerofolini, G., Giussani, A., Modelli, A., Mascolo, D., Ruggiero, D., Narducci, D., et al. (2008). Chemical, energetic, and geometric heterogeneity of device-quality (1 0 0) surfaces of single crystalline silicon after HFaq etching’. APPLIED SURFACE SCIENCE, 254, 5781-5790 [10.1016/j.apsusc.2008.03.058].
Chemical, energetic, and geometric heterogeneity of device-quality (1 0 0) surfaces of single crystalline silicon after HFaq etching’
NARDUCCI, DARIO;
2008
Abstract
An analysis, based on angle-resolved X-ray photoelectron spectroscopy, multiple-internal-reflection infrared spectroscopy, and atomic force microscopy, of device-quality (1 0 0)silicon surfaces after etching in dilute aqueous solution of HF is presented. The analysis shows that the surface is mainly formed by a heterogeneous distribution of SiH, SiH2and SiH3 terminations, but contains sub-stoichiometric oxidized silicon. The analysis shows moreover the existence of a form of reduced silicon, not consistent with the currently accepted picture of the native HFaq-etched surface. © 2008 Elsevier B.V. All rights reserved.
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