We report the fabrication procedure and the characterization of an Al0.3Ga0.7As solar cell containing high-density GaAs strain-free quantum dots grown by droplet epitaxy. The production of photocurrent when two sub-bandgap energy photons are absorbed simultaneously is demonstrated. The high quality of the quantum dot/barrier pair, allowed by the high quality of nanostructured strain-free materials, opens new opportunities for quantum dot based solar cells. Left: Scheme of the fabricated quantum dot solar cell. Right: 1 × 1 μm2 image of the dot layer. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Scaccabarozzi, A., Adorno, S., Bietti, S., Acciarri, M., Sanguinetti, S. (2013). Evidence of two-photon absorption in strain-free quantum dot GaAs/AlGaAs solar cells. PHYSICA STATUS SOLIDI. RAPID RESEARCH LETTERS, 7(3), 173-176 [10.1002/pssr.201206518].
Evidence of two-photon absorption in strain-free quantum dot GaAs/AlGaAs solar cells
SCACCABAROZZI, ANDREA;ADORNO, SILVIA;BIETTI, SERGIO;ACCIARRI, MAURIZIO FILIPPO;SANGUINETTI, STEFANO
2013
Abstract
We report the fabrication procedure and the characterization of an Al0.3Ga0.7As solar cell containing high-density GaAs strain-free quantum dots grown by droplet epitaxy. The production of photocurrent when two sub-bandgap energy photons are absorbed simultaneously is demonstrated. The high quality of the quantum dot/barrier pair, allowed by the high quality of nanostructured strain-free materials, opens new opportunities for quantum dot based solar cells. Left: Scheme of the fabricated quantum dot solar cell. Right: 1 × 1 μm2 image of the dot layer. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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