Dependence on the exact growth condition of the InAs/GaAs quantum dot emission polarisation has been tested for (100) and (311)A substrates. Polarised emission, reproducible in intensity and direction and independent of the coverage, has been achieved by self-assembling InAs quantum dots on (311 )A GaAs substrates only. The quantum dots emission is stably polarised along the [2̄33] crystallographic direction with a polarisation ratio of about 12%.
Sanguinetti, S., Castiglioni, S., Grilli, E., Guzzi, M., Panzarini, G., Andreani, L., et al. (1999). Intrinsic polarised emission from InAs/GaAs(311)A quantum dots. JAPANESE JOURNAL OF APPLIED PHYSICS, 38(8), 4676-4679 [10.1143/jjap.38.4676].
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots
SANGUINETTI, STEFANO
;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
1999
Abstract
Dependence on the exact growth condition of the InAs/GaAs quantum dot emission polarisation has been tested for (100) and (311)A substrates. Polarised emission, reproducible in intensity and direction and independent of the coverage, has been achieved by self-assembling InAs quantum dots on (311 )A GaAs substrates only. The quantum dots emission is stably polarised along the [2̄33] crystallographic direction with a polarisation ratio of about 12%.
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