A study of the optical response in the infrared (IR) spectral region of oxygen precipitates in silicon is performed at liquid helium temperature. The measurements concern a set of samples with the same density of precipitates of different dimensions and a second set of samples with different densities of precipitates of equal dimension. Two main shapes of precipitates are detected in both sets, with different behavior in terms of volume fractions occupied by each of them in the sample as a function of the thermal treatments performed. (C) 2000 Elsevier Science S.A. All rights reserved.

Borghesi, A., Sassella, A., Porrini, M., Gambaro, D., Olmo, M. (2000). Influence of different growth and nucleation times on optical spectra of precipitated oxygen in silicon. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 73(1-3), 149-153 [10.1016/S0921-5107(99)00461-4].

Influence of different growth and nucleation times on optical spectra of precipitated oxygen in silicon

BORGHESI, ALESSANDRO;SASSELLA, ADELE;
2000

Abstract

A study of the optical response in the infrared (IR) spectral region of oxygen precipitates in silicon is performed at liquid helium temperature. The measurements concern a set of samples with the same density of precipitates of different dimensions and a second set of samples with different densities of precipitates of equal dimension. Two main shapes of precipitates are detected in both sets, with different behavior in terms of volume fractions occupied by each of them in the sample as a function of the thermal treatments performed. (C) 2000 Elsevier Science S.A. All rights reserved.
Articolo in rivista - Articolo scientifico
silicon; interstitial oxygen; oxygen precipitation; infrared spectroscopy
English
3-apr-2000
73
1-3
149
153
none
Borghesi, A., Sassella, A., Porrini, M., Gambaro, D., Olmo, M. (2000). Influence of different growth and nucleation times on optical spectra of precipitated oxygen in silicon. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 73(1-3), 149-153 [10.1016/S0921-5107(99)00461-4].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/5135
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