We present experimental data on InAs epitaxial layers grown on (N11)GaAs substrates showing that the substrate orientation affects the critical thickness for the onset of quantum dot self-assembling. The samples under investigation were characterised via photoluminescence measurements. We observed a decrease of self-assembling critical coverage with increasing Miller index N of the substrate. The observed behaviour is induced in-island strain relaxation inhibition caused by the use of high index substrates for the growth. (C) 2000 Elsevier Science S.A. All rights reserved.

Sanguinetti, S., Chiantoni, G., Grilli, E., Guzzi, M., Henini, M., Polimeni, A., et al. (2000). 3D island nucleation behaviour on high index substrates. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 74(1), 239-241 [10.1016/S0921-5107(99)00568-1].

3D island nucleation behaviour on high index substrates

SANGUINETTI, STEFANO
;
GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
2000

Abstract

We present experimental data on InAs epitaxial layers grown on (N11)GaAs substrates showing that the substrate orientation affects the critical thickness for the onset of quantum dot self-assembling. The samples under investigation were characterised via photoluminescence measurements. We observed a decrease of self-assembling critical coverage with increasing Miller index N of the substrate. The observed behaviour is induced in-island strain relaxation inhibition caused by the use of high index substrates for the growth. (C) 2000 Elsevier Science S.A. All rights reserved.
Articolo in rivista - Articolo scientifico
3D island nucleation behaviour; InAs epitaxial layers; high index substrates;
English
2000
74
1
239
241
none
Sanguinetti, S., Chiantoni, G., Grilli, E., Guzzi, M., Henini, M., Polimeni, A., et al. (2000). 3D island nucleation behaviour on high index substrates. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 74(1), 239-241 [10.1016/S0921-5107(99)00568-1].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/498
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