The electrical quality of the GeO2/Ge interface, prior to and after Gd2O3 deposition, has been investigated as a function of the oxidizer (atomic O, O-2, O-3) used for the GeO2 based passivation of the Ge surface. In particular, the density of interface traps depends on the details of the Ge oxidation process and on the reactivity of the GeO2 passivation layer with the overlying Gd2O3 film. Complementary compositional depth profiling analysis shows that the oxygen content in the interfacial layer varies as a function of the type of oxidizer and plays a key role in dictating the interface chemistry and the electrical features of the MOS structures. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.031206jes] All rights reserved.

Baldovino, S., Lamperti, A., Fanciulli, M., Molle, A. (2012). Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 159(6), 555-559 [10.1149/2.031206jes].

Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer

BALDOVINO, SILVIA;FANCIULLI, MARCO;
2012

Abstract

The electrical quality of the GeO2/Ge interface, prior to and after Gd2O3 deposition, has been investigated as a function of the oxidizer (atomic O, O-2, O-3) used for the GeO2 based passivation of the Ge surface. In particular, the density of interface traps depends on the details of the Ge oxidation process and on the reactivity of the GeO2 passivation layer with the overlying Gd2O3 film. Complementary compositional depth profiling analysis shows that the oxygen content in the interfacial layer varies as a function of the type of oxidizer and plays a key role in dictating the interface chemistry and the electrical features of the MOS structures. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.031206jes] All rights reserved.
Articolo in rivista - Articolo scientifico
Ge oxide
English
2012
159
6
555
559
none
Baldovino, S., Lamperti, A., Fanciulli, M., Molle, A. (2012). Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 159(6), 555-559 [10.1149/2.031206jes].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/43749
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