Edge forces exerted by epitaxial nanostructures are shown to induce high levels of strain in the substrate. These very high localized forces appear at the perimeter and the resulting strain can be exploited to engineer the functional properties of the substrate. High levels of strain in a Si substrate are induced by SiGe nanostructures, starting from both top-down and bottom-up approaches. Compressive uniaxial strains of up to −0.7% are demonstrated.

Bonera, E., Bollani, M., Chrastina, D., Pezzoli, F., Picco, A., Schmidt, O., et al. (2013). Substrate strain manipulation by nanostructure perimeter forces. JOURNAL OF APPLIED PHYSICS, 113(16) [10.1063/1.4802686].

Substrate strain manipulation by nanostructure perimeter forces

BONERA, EMILIANO;PEZZOLI, FABIO;PICCO, ANDREA;
2013

Abstract

Edge forces exerted by epitaxial nanostructures are shown to induce high levels of strain in the substrate. These very high localized forces appear at the perimeter and the resulting strain can be exploited to engineer the functional properties of the substrate. High levels of strain in a Si substrate are induced by SiGe nanostructures, starting from both top-down and bottom-up approaches. Compressive uniaxial strains of up to −0.7% are demonstrated.
Articolo in rivista - Articolo scientifico
deformation, Ge-Si alloys, nanostructured materials
English
2013
113
16
164308
none
Bonera, E., Bollani, M., Chrastina, D., Pezzoli, F., Picco, A., Schmidt, O., et al. (2013). Substrate strain manipulation by nanostructure perimeter forces. JOURNAL OF APPLIED PHYSICS, 113(16) [10.1063/1.4802686].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/43662
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