We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization. © 2013 AIP Publishing LLC.
Giorgioni, A., Pezzoli, F., Gatti, E., Bottegoni, F., Cecchi, S., Trivedi, D., et al. (2013). Tailoring the spin polarization in Ge/SiGe multiple quantum wells. In Physics of Semiconductors (pp.367-368). American Institute of Physics [10.1063/1.4848438].
Tailoring the spin polarization in Ge/SiGe multiple quantum wells
GIORGIONI, ANNA;PEZZOLI, FABIO;GATTI, ELEONORA;Cecchi, S;GRILLI, EMANUELE ENRICO;GUZZI, MARIO
2013
Abstract
We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization. © 2013 AIP Publishing LLC.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
