The reactivity of nanosized Ru(Pd,Pt)-doped SnO2, obtained by sol-gel synthesis, towards NO/Ar was investigated by Electron Paramagnetic Resonance (EPR), Mossbauer and Electrical Resistance measurements. A sensing mechanism was proposed that involves (i) the formation of bielectronic oxygen vacancies V-O, (ii) their single-ionisation to V-O(center dot), which injects electrons to SnO2 conduction band, (iii) the transfer of V-O(center dot) electrons to the transition metal centers reducing them to lower oxidation states. It was suggested that the electronic exchange between oxide and transition metal is responsible for the enhancement of the reactivity in doped SnO2 with respect to the undoped material
Canevali, C., Mari, C., Mattoni, M., Morazzoni, F., Ruffo, R., Scotti, R., et al. (2005). Sensing mechanism of NO in nanocrystalline Ru, Pt, Pd-doped SnO2: Electron Paramagnetic Resonance, Mossbauer and electrical study. MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS, 828, 185-190.
Sensing mechanism of NO in nanocrystalline Ru, Pt, Pd-doped SnO2: Electron Paramagnetic Resonance, Mossbauer and electrical study
CANEVALI, CARMEN;MARI, CLAUDIO MARIA;MORAZZONI, FRANCA;RUFFO, RICCARDO;SCOTTI, ROBERTO;
2005
Abstract
The reactivity of nanosized Ru(Pd,Pt)-doped SnO2, obtained by sol-gel synthesis, towards NO/Ar was investigated by Electron Paramagnetic Resonance (EPR), Mossbauer and Electrical Resistance measurements. A sensing mechanism was proposed that involves (i) the formation of bielectronic oxygen vacancies V-O, (ii) their single-ionisation to V-O(center dot), which injects electrons to SnO2 conduction band, (iii) the transfer of V-O(center dot) electrons to the transition metal centers reducing them to lower oxidation states. It was suggested that the electronic exchange between oxide and transition metal is responsible for the enhancement of the reactivity in doped SnO2 with respect to the undoped material
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