Oxygen precipitates in short-time annealed Czochralski silicon

In this paper we report the study of early stages of oxygen precipitation in commercial Czochralski silicon as-received wafers and in wafers treated at 1100-degrees for 80 min. The high spatial resolution infrared technique used is able to detect platelet shaped SiO2 precipitates, even in low concentrations. We detected a strong polarization dependence of the precipitate related infrared absorption band performing measurements with linearly polarized light. From these results a preferred orientation of a precipitate aggregation was deduced