Infrared absorption spectra of very thin SiO2 films embedded in silicon are reported and analyzed. From these results a new interpretation of the characteristic absorption band of platelet precipitates in silicon can be proposed, based on the excitation of surface modes. On this basis, the quantitative evaluation of precipitated oxygen is demonstrated to be unreliable.
Sassella, A., Pivac, B., Abe, T., Borghesi, A. (1996). Surface mode excitation in platelet SiOx precipitates in silicon. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 36(1-3), 221-224 [10.1016/0921-5107(95)01256-7].
Surface mode excitation in platelet SiOx precipitates in silicon
SASSELLA, ADELE;BORGHESI, ALESSANDRO
1996
Abstract
Infrared absorption spectra of very thin SiO2 films embedded in silicon are reported and analyzed. From these results a new interpretation of the characteristic absorption band of platelet precipitates in silicon can be proposed, based on the excitation of surface modes. On this basis, the quantitative evaluation of precipitated oxygen is demonstrated to be unreliable.
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