The presence of oxygen in silicon single crystals causes the formation of several defects which can make the properties of silicon vary, with a strong influence also on the microelectronic devices subsequently fabricated on the wafers. A brief review of the phenomena connected to oxygen in silicon is presented here, with particular attention to the different effects of interstitial and precipitated oxygen on the silicon properties and to the use of the most widely used physical techniques for their study

Sassella, A. (2002). Defects involving oxygen in crystalline silicon. DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA, 85-86, 285-316 [10.4028/www.scientific.net/SSP.85-86.285].

Defects involving oxygen in crystalline silicon

Sassella, A.
2002

Abstract

The presence of oxygen in silicon single crystals causes the formation of several defects which can make the properties of silicon vary, with a strong influence also on the microelectronic devices subsequently fabricated on the wafers. A brief review of the phenomena connected to oxygen in silicon is presented here, with particular attention to the different effects of interstitial and precipitated oxygen on the silicon properties and to the use of the most widely used physical techniques for their study
Articolo in rivista - Articolo scientifico
concentration measurement; device performance; oxygen impurity; oxygen precipitation; precipitate morphology; precipitate study
English
2002
85-86
285
316
none
Sassella, A. (2002). Defects involving oxygen in crystalline silicon. DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA, 85-86, 285-316 [10.4028/www.scientific.net/SSP.85-86.285].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/34546
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