We studied interaction of molten silicon at the meniscus surface with CO and CO2 gas added to an inert argon atmosphere during the growth of edge-defined film-fed growth polycrystalline silicon nonagons. Both gases caused a significant increase in carbon content of the nonagons. However, most carbon remained trapped in the layer close to the surface and made a SiC-like contribution to the infrared spectrum. In addition, CO2 gas caused enhanced surface oxidation (with respect to CO gas).
Pivac, B., Borghesi, A., Sassella, A., Ottolini, L., Kalejs, J. (1991). Interaction of ambient gas and meniscus surface during growth of edge-defined film-fed growth polycrystalline silicon samples. JOURNAL OF APPLIED PHYSICS, 70(6), 2963-2967 [10.1063/1.349322].
Interaction of ambient gas and meniscus surface during growth of edge-defined film-fed growth polycrystalline silicon samples
BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1991
Abstract
We studied interaction of molten silicon at the meniscus surface with CO and CO2 gas added to an inert argon atmosphere during the growth of edge-defined film-fed growth polycrystalline silicon nonagons. Both gases caused a significant increase in carbon content of the nonagons. However, most carbon remained trapped in the layer close to the surface and made a SiC-like contribution to the infrared spectrum. In addition, CO2 gas caused enhanced surface oxidation (with respect to CO gas).
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