High spatial resolution Fourier transform absorption measurements were performed with polarized light on oxygen precipitates grown in silicon samples briefly annealed. We demonstrate that the wave-number position and intensity of the 1230-cm-1 absorption band, directly related to the precipitates, give information regarding stoichiometry of the oxide constituting such precipitates and their density. In particular, the precipitates in our samples are made of amorphous suboxides, mainly SiO1.8, with 5 ppm local concentration. Moreover, our conclusions give evidence that disk-shaped precipitates in silicon have the same optical properties of thermal oxide films with comparable thickness grown on silicon. © 1992 The American Physical Society.

Borghesi, A., Piaggi, A., Sassella, A., Stella, A., Pivac, B. (1992). Infrared study of oxygen precipitate composition in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER, 46(7), 4123-4127 [10.1103/PhysRevB.46.4123].

Infrared study of oxygen precipitate composition in silicon

BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1992

Abstract

High spatial resolution Fourier transform absorption measurements were performed with polarized light on oxygen precipitates grown in silicon samples briefly annealed. We demonstrate that the wave-number position and intensity of the 1230-cm-1 absorption band, directly related to the precipitates, give information regarding stoichiometry of the oxide constituting such precipitates and their density. In particular, the precipitates in our samples are made of amorphous suboxides, mainly SiO1.8, with 5 ppm local concentration. Moreover, our conclusions give evidence that disk-shaped precipitates in silicon have the same optical properties of thermal oxide films with comparable thickness grown on silicon. © 1992 The American Physical Society.
Articolo in rivista - Articolo scientifico
silicon; oxygen precipitation; infrared
English
1992
46
7
4123
4127
none
Borghesi, A., Piaggi, A., Sassella, A., Stella, A., Pivac, B. (1992). Infrared study of oxygen precipitate composition in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER, 46(7), 4123-4127 [10.1103/PhysRevB.46.4123].
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/34402
Citazioni
  • Scopus 47
  • ???jsp.display-item.citation.isi??? 43
Social impact