Gettering of Cr during the growth of silicon sheets from a Cr-doped melt is observed when the solid/liquid interface region is exposed to CO or CO2 gases. The gettering occurs within a region about 1-mum wide at the surface of the crystal, where a large accumulation of carbon and oxygen is detected. Mechanisms for carbon and oxygen participation in forming gettering sites for Cr are examined
Pivac, B., Borghesi, A., Sassella, A., Kalejs, J., Bathey, B. (1993). In situ Cr gettering in polycrystalline silicon sheets obtained by edge-defined film-fed growth. APPLIED PHYSICS LETTERS, 62(21), 2664-2666 [10.1063/1.109631].
In situ Cr gettering in polycrystalline silicon sheets obtained by edge-defined film-fed growth
Borghesi, A;Sassella, A;
1993
Abstract
Gettering of Cr during the growth of silicon sheets from a Cr-doped melt is observed when the solid/liquid interface region is exposed to CO or CO2 gases. The gettering occurs within a region about 1-mum wide at the surface of the crystal, where a large accumulation of carbon and oxygen is detected. Mechanisms for carbon and oxygen participation in forming gettering sites for Cr are examinedFile in questo prodotto:
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