Gettering of Cr during the growth of silicon sheets from a Cr-doped melt is observed when the solid/liquid interface region is exposed to CO or CO2 gases. The gettering occurs within a region about 1-mum wide at the surface of the crystal, where a large accumulation of carbon and oxygen is detected. Mechanisms for carbon and oxygen participation in forming gettering sites for Cr are examined

Pivac, B., Borghesi, A., Sassella, A., Kalejs, J., Bathey, B. (1993). In situ Cr gettering in polycrystalline silicon sheets obtained by edge-defined film-fed growth. APPLIED PHYSICS LETTERS, 62(21), 2664-2666 [10.1063/1.109631].

In situ Cr gettering in polycrystalline silicon sheets obtained by edge-defined film-fed growth

Borghesi, A;Sassella, A;
1993

Abstract

Gettering of Cr during the growth of silicon sheets from a Cr-doped melt is observed when the solid/liquid interface region is exposed to CO or CO2 gases. The gettering occurs within a region about 1-mum wide at the surface of the crystal, where a large accumulation of carbon and oxygen is detected. Mechanisms for carbon and oxygen participation in forming gettering sites for Cr are examined
Articolo in rivista - Articolo scientifico
polycrystalline silicon; infrared
English
1993
62
21
2664
2666
none
Pivac, B., Borghesi, A., Sassella, A., Kalejs, J., Bathey, B. (1993). In situ Cr gettering in polycrystalline silicon sheets obtained by edge-defined film-fed growth. APPLIED PHYSICS LETTERS, 62(21), 2664-2666 [10.1063/1.109631].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/34399
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